Low-temperature growth of InGaN films over the entire composition range by MBE
Journal of Crystal Growth(2015)
摘要
The surface morphology, microstructural, and optical properties of indium gallium nitride (InGaN) films grown by plasma-assisted molecular beam epitaxy under low growth temperatures and slightly nitrogen-rich growth conditions are studied. The single-phase InGaN films exhibit improved defect density, an absence of stacking faults, efficient In incorporation, enhanced optical properties, but a grain-like morphology. With increasing In content, we observe an increase in the degree of relaxation and a complete misfit strain relaxation through the formation of a uniform array of misfit dislocations at the InGaN/GaN interface for InGaN films with indium contents higher than 55–60%.
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关键词
A1. Atomic force microscopy,A1. Crystal structure,A1. X-ray diffraction,A3. Molecular beam epitaxy,B1. Nitrides
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