GeSn lateral p-i-n photodetector on insulating substrate.

We report the first experimental demonstration of germanium-tin (GeSn) lateral p-i-n photodetector on a novel GeSn-on-insulator (GeSn01) substrate. The GeSnOI is formed by direct wafer bonding and layer transfer technique. which is promising for large-scale integration of nano-electronics and photonics devices. The fabricated GeSnOI photodetector shows well-behaved diode characteristics with high I-on/I-off ratio of similar to 4 orders of magnitude (at +/- 1 V) at room temperature. A cutoff detection beyond 2 mu m with photo responsivity (R-op) of 0.016 A/W was achieved at the wavelength (lambda) of 2004 nm. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement