Enhancement-mode single-layer CVD MoS2 FET technology for digital electronics

international electron devices meeting, 2015.

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Abstract:

2D nanoelectronics based on single-layer (SL) MoS2 offers great advantages for ubiquitous electronics. With new device technology, highly uniform E-mode FETs using SL CVD MoS2 with positive VT, large mobility, excellent subthreshold swing are achieved. The integrated inverter shows excellent voltage transfer characteristic, close to rail-...More

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