Experimental Stress Characterization and Numerical Simulation for Copper Pumping Analysis of Through-Silicon Vias

IEEE Transactions on Components, Packaging and Manufacturing Technology(2016)

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摘要
In this paper, a 3-D thermomechanical model of through-silicon vias (TSVs) has been analyzed and verified with in situ microscale strain measurements by synchrotron X-ray microdiffraction. Thereafter, a comprehensive stress/strain analysis on copper pumping and back-end-of-line (BEOL) cracking issues has been carried out. In addition, a design-of-experiments-based approach has been used to underst...
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关键词
Copper,Stress,Through-silicon vias,Dielectrics,Silicon,Strain,Strain measurement
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