$W$ -Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon

We demonstrate W-band monolithic microwave integrated circuit (MMIC) amplifiers based on AlInN/GaN high electron mobility transistors (HEMTs) grown on Silicon. Our MMIC process was fully characterized to 110 GHz and a design kit generated to enable circuit design. A fabricated two-stage amplifier with an output device width of 100 μm shows a saturated output power of 18.3 dBm and a gain of 8.2 dB ...