The Effect Of Low Energy Ion Implantation On Mos2

The use of ultra low energy ion implantation is investigated as a doping method for MoS2. 200 eV Cl and Ar implants at doses between 1 x 10(13) and 1 x 10(15) cm(-2) were introduced into exfoliated MoS2 flakes. XPS results for Cl implants show a decrease in core peak binding energies for Mo3d and S2p with increasing dose, implying a p-doping effect. Implantation of MoS2 device channel regions is shown to reduce the channel's conductivity. However, isolated implantation of the contact region with low doses (1 x 10(13) cm(-2)) of Cl and Ar are shown to improve output characteristics by linearizing the I-DS-V-DS curves and by increasing current through the device. Cl was shown to be more effective than Ar at increasing the current, implying there is a potential chemical effect as well as damage effect. For higher doses (>= 1 x 10(14) cm(-2)), the current through the device is reduced with increasing dose for both implant species. This report presents the as-implanted, unannealed results. Post-implantation anneals may be necessary to activate the dopants and fully realize the potential of this doping method. (C) The Author(s) 2016. Published by ECS. All rights reserved.