Home Research-feed Channel Rankings GCT THU AI TR Open Data Must Reading

views: 0

Hatem, Christopher

Sign in to view more

Show Academic Trajectory

Ego Network

D-Core

Research Interests

Author Statistics

Experience

Education

Bio

None

Papers40 papers

Sort

By YearBy Citation

Wet-chemical etching of FIB lift-out TEM lamellae for damage-free analysis of 3-D nanostructures

Emily M Turner,Keshab R Sapkota,Christopher Hatem,Ping Lu, George T Wang, Kevin S Jones

Ultramicroscopy, (2020): 113049

WOSBibtex

Defect evolution in ultralow energy, high dose helium implants of silicon performed at elevated temperatures

Katherine Haynes, X. Hu,Brian D. Wirth,Brian D. Wirth,Christopher R. Hatem,K. S. Jones

Journal of Applied Physics, no. 16 (2018): 165708

Bibtex

Quantification of germanium-induced suppression of interstitial injection during oxidation of silicon

Thomas P. Martin,K. S. Jones,Renata A. Camillo-Castillo,Christopher Hatem, Yan Xin,Robert G. Elliman

Journal of Materials Science, no. 17 (2017): 10387-10392

Bibtex

Lateral Ge Diffusion During Oxidation of Si/SiGe Fins

William M. Brewer, Yan Xin,Christopher R. Hatem,D. Diercks, V. Q. Truong,K. S. Jones

Nano Letters, no. 4 (2017): 2159-2164

Cited by2Bibtex

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

Yuhao Zhang,Zhihong Liu,Marko J. Tadjer,Min Sun,Daniel Piedra,Christopher R. Hatem,Travis J. Anderson,Lunet E Luna, Anindya Nath,Andrew D. Koehler,Hironori Okumura,Jie Hu

IEEE Electron Device Letters, no. 8 (2017): 1097-1100

Cited by9EIWOSBibtex

Modulating the resistivity of MoS2 through low energy phosphorus plasma implantation

Katherine Haynes, Ryan Murray, Z. Weinrich,Xueying Zhao,Daniele Chiappe,Surajit Sutar,Iuliana Radu,Christopher R. Hatem,Scott S. Perry,K. S. Jones

Applied Physics Letters, no. 26 (2017): 262102

Cited by1Bibtex

Activation of Si implants into InAs characterized by Raman scattering

Aaron G. Lind, Thomas P. Martin, Victoria C. Sorg, E. L. Kennon, V. Q. Truong, Henry Aldridge,Christopher R. Hatem,Michael O. Thompson,K. S. Jones

Journal of Applied Physics, no. 9 (2016): 095705

Bibtex

The Effect of Low Energy Ion Implantation on MoS2

Ryan Murray, Katherine Haynes,Xueying Zhao,Scott S. Perry,Christopher R. Hatem,K. S. Jones

ECS Journal of Solid State Science and Technology, no. 11 (2016)

Bibtex

Fermi-Level Effects on Extended Defect Evolution in Si+ and P+ Implanted In0.53Ga0.47As

A G Lind, H L Aldridge,Cory Bomberger,Christopher Hatem,Joshua M O Zide,K S Jones

(2016)

Cited by4Bibtex

Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n+-In0.53Ga0.47As

A. G. Lind, H. L. Aldridge,C. Hatem,M. E. Law,K. S. Jones

ECS Journal of Solid State Science and Technology, no. 5 (2016)

Bibtex

Implantation and Diffusion of Silicon Marker Layers in In0.53Ga0.47As

Henry Aldridge, Aaron G. Lind,Cory C. Bomberger,Yevgeniy Puzyrev,Christopher R. Hatem,R. Gwilliam,Joshua M. O. Zide,Sokrates T. Pantelides,Mark E. Law, K. S. Jones

Journal of Electronic Materials, no. 8 (2016): 4282-4287

Bibtex

CONVERSION PROCESS UTILIZED FOR MANUFACTURING ADVANCED 3D FEATURES FOR SEMICONDUCTOR DEVICE APPLICATIONS

Ludovic Godet,Christopher Hatem, Matthew D Scotneycastle, Martin A Hilkene

(2015)

Bibtex

TECHNIQUES FOR INCREASED DOPANT ACTIVATION IN COMPOUND SEMICONDUCTORS

C Hatem, B Colombeau,K S Jones, A G Lind

(2015)

Bibtex

Comparison of thermal annealing effects on electrical activation of MBE grown and ion implant Si-doped In0.53Ga0.47As

A G Lind, L Henry Aldridge,Cory Bomberger,C Hatem,Joshua M O Zide,K S Jones

Journal of Vacuum Science & Technology B, (2015)

Cited by14Bibtex

Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

Yuhao Zhang,Min Sun,Hiuyung Wong,Yuxuan Lin,Puneet Srivastava,Christopher Hatem,Mohamed Azize,Daniel Piedra,Lili Yu,Takamichi Sumitomo,N Braga,R Mickevicius

Electron Devices, IEEE Transactions, no. 7 (2015): 2155-2161

Cited by46EIWOSBibtex

Co-implantation of Al+, P+, and S+ with Si+ implants into In0.53Ga0.47As

A G Lind, L Henry Aldridge,K S Jones,C Hatem

Journal of Vacuum Science & Technology B, (2015)

Cited by5Bibtex

Improvement of Si doping of In 0.53 Ga 0.47 As fin by heated implant

Bingxi Wood,Christopher Hatem,Xinyu Bao, Hongwen Zhou, Ming Zhang, Miao Jin, Hao Chen, Manping Cai, Samuel Swaroop Munnangi,Motoya Okazaki,Errol Antonio C Sanchez, Adam Brand

(2015)

Cited by1Bibtex

Method of ionization

Svetlana B Radovanov, Ludovic Godet,Christopher Hatem

(2014)

Bibtex

TECHNIQUES TO MITIGATE STRAGGLE DAMAGE TO SENSITIVE STRUCTURES

Christopher R Hatem,Anthony Renau, John J Hautala, Ludovic Godet

(2014)

Bibtex

Electrical activation of ion implanted Si in amorphous and crystalline In 0.53 Ga 0.47 As

A G Lind, M A Gill,Christopher Hatem,K S Jones

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Ato..., (2014)

Cited by8Bibtex

View All

Base Info Papers Patents Projects