High-Power-Density Inalgan/Gan-Hemt Technology for W-Band Amplifier
2016 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS)(2016)
摘要
We demonstrated an excellent output power (Pout) density performance using a novel InAlGaN/GaN-HEMT with an 80-nm gate for a high-power W-band amplifier. The developed HEMT showed basic reliability for commercial products. A unique double-layer silicon nitride (SiN) passivation film with oxidation resistance was adopted to suppress current collapse. The developed discrete InAlGaN/GaN-HEMT achieved a P-out density of 3.0 W/mm at 96 GHz, and the Pout density of MMIC reached 3.6W/mm at 86 GHz. We proved excellent potential of developed InAlGaN/GaN-HEMT using our unique device technologies. Furthermore, we suggested the physical advantage of the InAlGaN/GaN-HEMT structure using device simulator.
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关键词
GaN,MMICs,HEMTs,Power Amplifier
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