Hyperdimensional computing with 3D VRRAM in-memory kernels: Device-architecture co-design for energy-efficient, error-resilient language recognition

2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)(2016)

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摘要
The ability to learn from few examples, known as one-shot learning, is a hallmark of human cognition. Hyperdimensional (HD) computing is a brain-inspired computational framework capable of one-shot learning, using random binary vectors with high dimensionality. Device-architecture co-design of HD cognitive computing systems using 3D VRRAM/CMOS is presented for language recognition. Multiplication-addition-permutation (MAP), the central operations of HD computing, are experimentally demonstrated on 4-layer 3D VRRAM/FinFET as non-volatile in-memory MAP kernels. Extensive cycle-to-cycle (up to 10 12 cycles) and wafer-level device-to-device (256 RRAMs) experiments are performed to validate reproducibility and robustness. For 28-nm node, the 3D in-memory architecture reduces total energy consumption by 52.2% with 412 times less area compared with LP digital design (using registers as memory), owing to the energy-efficient VRRAM MAP kernels and dense connectivity. Meanwhile, the system trained with 21 samples texts achieves 90.4% accuracy recognizing 21 European languages on 21,000 test sentences. Hard-error analysis shows the HD architecture is amazingly resilient to RRAM endurance failures, making the use of various types of RRAMs/CBRAMs (1k ~ 10M endurance) feasible.
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关键词
hyperdimensional computing,3D VRRAM in-memory kernels,device-architecture co-design,error-resilient language recognition,energy-efficient language recognition,HD cognitive computing systems,3D VRRAM/CMOS,multiplication-addition-permutation,4-layer 3D VRRAM-FinFET,nonvolatile in-memory MAP kernels,LP digital design,hard-error analysis,RRAM endurance failures,CBRAM,vertical RRAM
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