Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Rong Jiang,En Xia Zhang,Xiao Shen,Jin Chen,Kai Ni,Pan Wang,Daniel M. Fleetwood,Ronald D. Schrimpf,Stephen W. Kaun,Erin C. H. Kyle,James S. Speck,Sokrates T. Pantelides

2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS)（2016）

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摘要

Significant shifts in threshold voltage have been observed during 10-keV X-ray irradiation of passivated and unpassivated AlGaN/GaN HEMTs. Oxygen and hydrogen impurities are found to contribute to differences in threshold voltage shifts and transconductance degradation for the passivated and unpassivated devices.

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关键词

AlGaN/GaN,HEMT,proton irradiation,hot carrier,degradation

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