Correlation of the Spatial Variation of Single-Event Transient Sensitivity with Thermo-Reflectance Thermography in AlxGa1-xN/GaN HEMTs

Ani Khachatrian,N. J-H. Roche, L. B. Ruppalt,James G. Champlain,S. Buchner,Andrew D. Koehler,Travis J. Anderson,Karl D. Hobart,J. H. Warner,Dale McMorrow

IEEE Transactions on Nuclear Science（2018）

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摘要

Spatial variations of single-event transient (SET) sensitivity in Al0.25Ga0.75N/GaN HEMTs are revealed using focused, pulsed UV laser light. SETs in regions of enhanced sensitivity have larger amplitudes and are termed “hot spots.” They are the same regions where large temperature changes are observed with thermoreflectance thermography. Both effects are attributed to the presence of material defe...

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关键词

HEMTs,MODFETs,Logic gates,Sensitivity,Gallium nitride,Temperature measurement,Temperature sensors

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