MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

Jori Lemettinen,Hironori Okumura,I. Kim,M. Rudzinski,J. Grzonka,Tomas Palacios,Sami Suihkonen

Journal of Crystal Growth（2018）

引用 32|浏览13

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摘要

•Achievement of high-quality N-polar AlN growth by MOVPE on 4H-SiC.•Optimum growth conditions were vastly different for N-polar and Al-polar AlN.•N-polar AlN exhibited either hexagonal hillocks or step-flow growth.

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关键词

A1. Polarity,A1. X-ray diffraction,A3. Metal-organic vapor phase epitaxy,B1. Nitrides,B2. Semiconducting aluminum compounds

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