MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

Journal of Crystal Growth, pp. 50-56, 2018.

Other Links: academic.microsoft.com|arxiv.org|www.sciencedirect.com

Abstract:

•Achievement of high-quality N-polar AlN growth by MOVPE on 4H-SiC.•Optimum growth conditions were vastly different for N-polar and Al-polar AlN.•N-polar AlN exhibited either hexagonal hillocks or step-flow growth.

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