High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator

High-performance GaInP/AlGaInP multi-quantum well light-emitting diodes (LEDs) grown on a low threading dislocation density (TDD) germanium-on-insulator (GOI) substrate have been demonstrated. The lowTDDof the GOI substrate is realized through Ge epitaxial growth, wafer bonding, and layer transfer processes on 200 mm wafers. With O-2 annealing, the TDD of the GOI substrate can be reduced to similar to 1.2 x 10(6) cm(-2). LEDs fabricated on this GOI substrate exhibit record-high optical output power of 1.3 mW at a 670 nm peak wavelength under 280 mA current injection. This output power level is at least 2 times higher compared to other reports of similar devices on a silicon (Si) substrate without degrading the electrical performance. These results demonstrate great promise for the monolithic integration of visible-band optical sources with Si-based electronic circuitry and realization of high-density RGB (red, green, and blue) micro-LED arrays with control circuitry. (c) 2018 Chinese Laser Press