Imaging current distributions and temperature profiles in GaN HEMTs using nitrogen vacancy centers in nanodiamonds
2016 Conference on Lasers and Electro-Optics (CLEO)(2016)
摘要
We demonstrate simultaneous wide-field (>1000 μm
2
) measurements of magnetic fields and temperature on GaN HEMTs using nitrogen vacancy centers in nanodiamonds.
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关键词
current distributions,temperature profiles,GaN HEMT,nitrogen vacancy centers,nanodiamonds,wide-field measurements,magnetic fields,GaN
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