Characteristics of n-GaN Schottky diodes treated by ultra-low power ICP-RIEShinji Yamada,Hideki Sakurai, Masato Omori, Yamato Osada,Ryuichiro Kamimura,Jun Suda,Tetsu KachiThe Japan Society of Applied Physics(2017)引用 23|浏览1暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要