Tetsu Kachi

Toyota Central Research & Development Labs Inc, 41-1 Yokomichi, Nagakute, Aichi-gun, 480-11, Japan

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Papers182 papers

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Effect of carrier drift-diffusion transport process on thermal quenching of photoluminescence in GaN

Maciek Matys,Boguslawa Adamowicz,Tetsu Kachi,Tamotsu Hashizume

Journal of Physics D, no. 5 (2021): 055106

Bibtex

Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis

Kenji Iwata, Hideki Sakurai, Shigeo Arai, Takuya Nakashima, Tetsuo Narita,Keita Kataoka, Michal Bockowski, Masaharu Nagao,Jun Suda,Tetsu Kachi,Nobuyuki Ikarashi

Journal of Applied Physics, no. 10 (2020): 105106

Bibtex

Overview of carrier compensation in GaN layers grown by MOVPE: Toward the application of vertical power devices

Tetsuo Narita,Kazuyoshi Tomita,Keita Kataoka,Yutaka Tokuda, Tatsuya Kogiso, Hikaru Yoshida,Ikarashi Nobuyuki, Kenji Iwata, Masahiro Nagao, Naoki Sawada,Masahiro Horita,Jun Suda

JAPANESE JOURNAL OF APPLIED PHYSICS, (2020)

Bibtex

Depth profiling of surface damage in n-type GaN induced by inductively coupled plasma reactive ion etching using photo-electrochemical techniques

Shinji Yamada, Kentaro Takeda, Masachika Toguchi, Hideki Sakurai,Toshiyuki Nakamura,Jun Suda,Tetsu Kachi,Taketomo Sato

Applied Physics Express, no. 10 (2020): 106505

Bibtex

Identification of origin ofE(C)-0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epitaxy

Masahiro Horita, Tetsuo Narita,Tetsu Kachi,Jun Suda

APPLIED PHYSICS EXPRESS, no. 7 (2020)

Bibtex

Progress on and challenges of p-type formation for GaN power devices

Tetsuo Narita, Hikaru Yoshida,Kazuyoshi Tomita,Keita Kataoka, Hideki Sakurai,Masahiro Horita,Michal Bockowski,Nobuyuki Ikarashi,Jun Suda,Tetsu Kachi,Yutaka Tokuda

Journal of Applied Physics, no. 9 (2020): 090901

Bibtex

High Pressure Processing of Ion Implanted GaN

Kacper Sierakowski,Rafal Jakiela,Boleslaw Lucznik, Pawel Kwiatkowski, Malgorzata Iwinska, Marcin Turek, Hideki Sakurai,Tetsu Kachi,Michal Bockowski

Electronics, no. 9 (2020): 1380

Bibtex

Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing

Hideki Sakurai, Tetsuo Narita, Masato Omori, Shinji Yamada, Akihiko Koura, Malgorzata Iwinska,Keita Kataoka,Masahiro Horita,Nobuyuki Ikarashi,Michal Bockowski,Jun Suda,Tetsu Kachi

APPLIED PHYSICS EXPRESS, no. 8 (2020): 086501

Bibtex

Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching

Shinji Yamada, Masato Omori, Hideki Sakurai, Yamato Osada, Ryuichiro Kamimura,Tamotsu Hashizume,Jun Suda,Tetsu Kachi

APPLIED PHYSICS EXPRESS, no. 1 (2020): 016505

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Highly reliable AlSiO gate oxides formed through post-deposition annealing for GaN-based MOS devices

Daigo Kikuta, Kenji Ito, Tetsuo Narita,Tetsu Kachi

APPLIED PHYSICS EXPRESS, no. 2 (2020)

Bibtex

Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam

Akira Uedono, Hideki Sakurai, Tetsuo Narita, Kacper Sierakowski,Michal Bockowski,Jun Suda,Shoji Ishibashi,Shigefusa F Chichibu,Tetsu Kachi

Scientific reports, no. 1 (2020): 17349

WOSBibtex

Dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy for quick measurement of carbon-related hole trap density in n-type GaN

Kazutaka Kanegae, Tetsuo Narita, Kazuyoshi Tomita,Tetsu Kachi,Masahiro Horita,Tsunenobu Kimoto,Jun Suda

JAPANESE JOURNAL OF APPLIED PHYSICS, (2020)

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Analysis of threshold voltage in GaN MOSFETs on homoepitaxial p-type GaN layers

Daigo Kikuta, Kenji Ito, Tetsuo Narita,Tetsu Kachi

international conference on indium phosphide and related materials, (2019)

Bibtex

Simulation Study on Electric Field in GaN PN Diodes with Beveled-Mesa Structure

Takuya Maeda, Tetsuo Narita,Hiroyuki Ueda,Masakazu Kanechika,Tsutomu Uesugi,Tetsu Kachi, Tsunonobu Kimoto, Masahiro Horita,Jun Suda

The Japan Society of Applied Physics, (2019)

Bibtex

Atomic resolution structural analysis of magnesium segregation at a pyramidal inversion domain in a GaN epitaxial layer

Kenji Iwata, Tetsuo Narita,Masahiro Nagao,Kazuyoshi Tomita,Keita Kataoka,Tetsu Kachi,Nobuyuki Ikarashi

APPLIED PHYSICS EXPRESS, no. 3 (2019): 031004

Bibtex

Shockley–Read–Hall lifetime in homoepitaxial p-GaN extracted from recombination current in GaN p–n+ junction diodes

Takuya Maeda, Tetsuo Narita,Hiroyuki Ueda,Masakazu Kanechika,Tsutomu Uesugi,Tetsu Kachi,Tsunenobu Kimoto,Masahiro Horita,Jun Suda

JAPANESE JOURNAL OF APPLIED PHYSICS, (2019)

Bibtex

Process Technologies for GaN High Voltage Devices

Tetsu Kachi, Tetsuo Narita, Hideki Sakurai,Jun Suda

DRC, pp.235-236, (2019)

EIBibtex

Uniform Avalanche Breakdown and Parallel-Plane Breakdown Fields in GaN-on-GaN PN Diodes with Double-Side-Depleted Shallow Bevel Termination

Takuya Maeda, Tetsuo Narita,Hiroyuki Ueda,Masakazu Kanechika,Tsutomu Uesugi,Tetsu Kachi,Tsunenobu Kimoto,Masahiro Horita,Jun Suda

The Japan Society of Applied Physics, (2019)

Bibtex

Quantitative investigation of the lateral diffusion of hydrogen in p-type GaN layers having NPN structures

Tetsuo Narita,Kazuyoshi Tomita, Shinji Yamada,Tetsu Kachi

APPLIED PHYSICS EXPRESS, no. 1 (2019): 011006

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Implantation of Mg ion into GaN substrate on a channeling condition

Tomoaki Nishimura, Kiyoji Ikeda,Tohru Nakamura,Tetsu Kachi

The Japan Society of Applied Physics, (2019)

Bibtex

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Papers182 papers

Tetsu Kachi