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Resilient Low Voltage Accelerators for High Energy Efficiency

2019 IEEE International Symposium on High Performance Computer Architecture (HPCA)(2019)

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摘要
Low voltage architecture and design are key enablers of high throughput per watt in heterogeneous, accelerator-rich many-core designs. However, such low voltage operation poses significant challenges because of difficulties in achieving reliable functionality of on-chip memories, particularly SRAMs at these design points. In this paper, we present a technique of low-voltage neural network acceleration, where the embedded SRAM architecture is equipped with a novel application-aware supply voltage boosting capability. This technique mitigates low-voltage induced failures, while enabling Very low voltage (VLV)(1) operation during most of the application run, resulting in substantial improvement in net energy efficiency. We present a framework to evaluate the impact of low-voltage SRAM errors on machine learning applications and characterize trade-offs between output inference accuracy and energy efficiency in our application-programmable supply boosted SRAM architecture. Using the proposed technique we push the limits on the minimum operable voltage (V-min) for the desired output quality. As a proof of concept, we demonstrate these techniques on Dante, a Deep Neural Network (DNN) accelerator chip taped out in state-of-the art 14nm technology.
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关键词
Random access memory,Voltage control,Boosting,Computer architecture,Neural networks,Low voltage,System-on-chip
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