AlN metal–semiconductor field-effect transistors using Si-ion implantation

We report on the electrical characterization of Si-ion implanted AIN layers and the first demonstration of metal-semiconductor field-effect transistors (MESFETs) with an ion-implanted AIN channel. The ion-implanted AIN layers with Si dose of 5 x 10(14) cm(-2) exhibit n-type characteristics after thermal annealing at 1230 degrees C. The ion-implanted AIN MESFETs provide good drain current saturation and stable pinch-off operation even at 250 degrees C. The off-state breakdown voltage is 2370 V for drain-to-gate spacing of 25 mu m. These results show the great potential of AIN-channel transistors for high-temperature and high-power applications. (c) 2018 The Japan Society of Applied Physics.