AlN metal–semiconductor field-effect transistors using Si-ion implantation

Japanese Journal of Applied Physics, 2018.

Cited by: 0|Bibtex|Views5|DOI:https://doi.org/10.7567/JJAP.57.04FR11
Other Links: academic.microsoft.com

Abstract:

We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal–semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm−2 exhibit n-type characteristics after thermal annealing at 1230 °C. The ion-implanted...More

Code:

Data:

Your rating :
0

 

Tags
Comments