A Stochastic Modeling Framework For Nbti And Tdds In Small Area P-Mosfets

Kinetic Monte Carlo (KMC) simulations are used to simulate the stochastic interface trap generation recovery (Delta V-IT) and hole trapping detrapping (Delta V-HT) during and after Negative Bias Temperature Instability (NBTI) stress. The simulated mean of threshold voltage shift (Delta V-T = Delta V-IT + Delta V-HT) is verified against continuum simulations and mean of measured data on multiple small area devices. Simulated and measured time constants for steps of Time Dependent Defect Spectroscopy (TDDS) data and step like recovery after NBTI stress are compared and analyzed.