Lateral GaN JFET Devices on 200 mm Engineered Substrates for Power Switching Applications

Travis J. Anderson,Lunet E. Luna,Andrew D. Koehler,Marko J. Tadjer,Karl D. Hobart,Francis J. Kub,Ozgur Aktas,Vladimir Odnoblyudov,Cem Basceri

2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)（2018）

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摘要

Lateral GaN-based p-n junction gated field effect transistor (LJFET) devices have been demonstrated on 200mm engineered substrates. The maximum current density was 200 mA/mm and threshold voltage was -30V. Large gate width devices (40mm) exhibited 800 mA current. The devices have blocking capability exceeding 1.1 kV.

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关键词

GaN,JFET,power switching,engineered substrate

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