Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum

K.Y. Lin,H.W. Wan,K.H.M. Chen,Y.T. Fanchiang,W.S. Chen,Y.H. Lin,Y.T. Cheng,C.C. Chen,H.Y. Lin,L.B. Young,C.P. Cheng,T.W. Pi,J. Kwo,M. Hong

Journal of Crystal Growth（2019）

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摘要

•Invention of metal MBE for magnetic superlattices in pioneering spintronics research.•A shutter-less method in growing composition-gradient DBRs with reduced resistance.•Combined oxide/semiconductor MBE for first Fermi level unpinning in GaAs MOS.•Integrating MBE/ALD/analysis via UHV for high-performance MOS and topological matters.•Understanding (In)GaAs surfaces and interfaces with high-κ and metal by in-situ SRPES.

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关键词

A3. Molecular beam epitaxy (MBE),A3. Atomic layer deposition (ALD),B2. InGaAs,B2. High-κ dielectrics,B2. Topological insulators (TIs),B3. Metal-oxide-semiconductor (MOS) devices

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