Fabrication of an AlN ridge structure using inductively coupled Cl2/BCl3 plasma and a TMAH solution

JAPANESE JOURNAL OF APPLIED PHYSICS, pp. 0265022019.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.7567/1347-4065/aaf78b
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Abstract:

We fabricated an AIN ridge structure using a chlorine-based inductive-coupled plasma reactive-ion etching (ICP-RIE) and a tetramethylammonium hydroxide (TMAH) solution. The ICP etching of single-crystal AIN was systematically investigated by varying ICP power, chamber pressure, and Cl-2/BCl3/Ar mixture gas composition. The selectivity and...More

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