Fabrication of an AlN ridge structure using inductively coupled Cl2/BCl3 plasma and a TMAH solution
JAPANESE JOURNAL OF APPLIED PHYSICS, pp. 0265022019.
We fabricated an AIN ridge structure using a chlorine-based inductive-coupled plasma reactive-ion etching (ICP-RIE) and a tetramethylammonium hydroxide (TMAH) solution. The ICP etching of single-crystal AIN was systematically investigated by varying ICP power, chamber pressure, and Cl-2/BCl3/Ar mixture gas composition. The selectivity and...More
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