Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams

Hiroko Iguchi
Hiroko Iguchi
Tetsuo Narita
Tetsuo Narita
Tönjes Koschine
Tönjes Koschine
Marcel Dickmann
Marcel Dickmann

Physica Status Solidi B-basic Solid State Physics, pp. 19001042019.

被引用0|引用|浏览6|DOI:https://doi.org/10.1002/pssb.201900104
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