0.8 Ga

Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al<sub>0.8</sub>Ga<sub>0.2</sub>N/AlN on SiC With Drain Current Over 100 mA/mm

Jori Lemettinen
Jori Lemettinen
Nadim Chowdhury
Nadim Chowdhury
Iurii Kim
Iurii Kim

IEEE Electron Device Letters, pp. 1245-1248, 2019.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.1109/LED.2019.2923902
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Abstract:

This letter reports the demonstration of N-polar Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.8</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.2</sub> N/AlN continuously-graded-channel polarization-doped field-effect transisto...More

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