The Impact of Forming Temperature and Voltage on the Reliability of Filamentary RRAM

G. Y. Chen,F. M. Lee,Y. Y. Lin, P. H. Tseng,K. C. Hsu, D. Y. Lee,M. H. Lee,H. L. Lung,K. Y. Hsieh,K. C. Wang,C. Y. Lu, M. C. Wu

2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)（2019）

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摘要

The forming voltage and temperature for creating the first filament in the RRAM device are found having impacts on RRAM reliability. The correlation between the forming temperature and the required voltage was evaluated on the WOx/TiOx RRAM devices, and then the reliability tests including cycling endurance and data retention were performed. A model was proposed to explain the results.

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关键词

forming temperature,forming voltage,RRAM reliability,reliability tests,filamentary RRAM reliability,WOx/TiOx RRAM device,data retention,cycling endurance

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