Invited: Process and Characterization of Vertical Ga2O3 Transistors

Masataka Higashiwaki,Man Hoi Wong,Ken Goto,Hisashi Murakami,Yoshinao Kumagai

2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)（2019）

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摘要

Gallium oxide (Ga ₂ O ₃ ) is an emerging ultra-wide-bandgap semiconductor especially suitable for high-power and/or high-voltage switching device applications. In this paper, device fabrication process and characteristics of depletion-mode and enhancement-mode vertical Ga ₂ O ₃ transistors fabricated by using a multiple ion-implantation doping process are discussed.

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关键词

gallium oxide vertical,transistor,ion implantation

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