Spacer patterning lithography as a new process to induce block copolymer alignment by chemo-epitaxy

Directed Self-Assembly (DSA) of Block Copolymer (BCP) is a promising lithography approach to achieve high resolution pattern dimensions. The current chemo-epitaxy process used to induce block copolymer self-alignment is showing today its limitations. This is due to the resolution limitation of conventional lithography technics needed for the guide formation, used to achieve BCP alignment. This paper introduces a new chemo-epitaxy process, named ACE (Arkema-CEA), which is based on sidewall image transfer (SIT) patterning. This process has the great advantage to offer guides of small critical dimension (CD) and pitch that allows the integration of high chi BCP. In this paper, different parameters of the ACE process are investigated (commensurability, spacer CD ... ) in order to precisely determine the DSA process window defining the best conditions for BCP alignment. Process window with multiplication factor ranging from 2 to 4 are obtained on BCP under investigation.