Deep-Level Defect in Quasi-Vertically Oriented CuSbS(2)Thin Film

The anomalous optoelectronic properties of a quasi-vertical orientated Chalcostibite CuSbS(2)thin film synthesized on glass substrate are studied in detail. Two well-separated absorption edges of CuSbS(2)are identified by photothermal-deflection spectroscopy (PDS) at 1.48 and 0.90 eV. The formation mechanism of the 0.9 eV infrared edge is found to be crystal orientation related. The properties of the 0.9 eV absorption edge are subject to detailed investigation using temperature-dependent photoluminescence (TDPL) characterization, which attribute the origin of this phenomenon to a deep-level defect state near the mid-bandgap of CuSbS2.