Epitaxial GeSn and Its Integration in MIR Optoelectronics

Simone Assali,Anis Attiaoui,Mahmoud R. M. Atalla,Alain Dijkstra,Aashish Kumar,Samik Mukherjee,Salim Abdi,Oussama Moutanabbir

Conference on Lasers and Electro-Optics（2020）

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摘要

The effect of strain and composition on the opto-electronic properties of (Si)GeSn semiconductors across the 4-300K temperature range will be discussed to pave the way for future device operation up to 4.5 pm wavelengths.

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关键词

epitaxial GeSn,MIR optoelectronics,strain,opto-electronic properties,(Si)GeSn semiconductors,temperature 4.0 K to 300.0 K,(Si)GeSn

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