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个人简介
Anis Attiaoui received the B.S. degree in 2016 and the M.S. degree in 2018 from the Department of Engineering Physics, École Polytechnique de Montréal, Montréal, QC, Canada, where he has been working toward the Ph.D. degree with Department of the Engineering Physics, since 2018.
His research interests include theoretical and optical characterization of group IV semiconductor materials.
研究兴趣
论文共 61 篇作者统计合作学者相似作者
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ACS PHOTONICSno. 3 (2024): 1335-1341
Gerard Daligou, Richard Soref,Anis Attiaoui, Jaker Hossain,Mahmoud R. M. Atalla, Patrick Del Vecchio,Oussama Moutanabbir
Oussama Moutanabbir,Simone Assali,Anis Attiaoui,Gérard Daligou, Patrick Daoust,Patrick Del Vecchio,Sebastian Koelling,Lu Luo, Nicolas Rotaru
Advanced materials (Deerfield Beach, Fla.)no. 8 (2023): e2305703-e2305703
Oussama Moutanabbir,Simone Assali,Anis Attiaoui,Gerard Daligou, Patrick Daoust,Patrick Del Vecchio,Sebastian Koelling,Lu Luo, Nicolas Rotaru
arXiv (Cornell University) (2023)
arxiv(2023)
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arxiv(2022)
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XV (2022)
ECS Meeting Abstractsno. 32 (2022): 1207-1207
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Conference on Lasers and Electro-Opticspp.1-2, (2022)
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