A Novel Electrical Isolation Solution for Tunnel FET Integration
2020 China Semiconductor Technology International Conference (CSTIC)(2020)
摘要
In this work, for bulk tunnel field-effect transistors (TFET), the electrical isolation solutions between neighboring devices for TFET integration are investigated. To suppress the leakage current of the P-type doped regions through the P-type substrate, a new effective isolation method is proposed and verified via simulation. The simulation shows the leakage current can be reduced from 10
-5
A/μm to 10
-13
A/μm. The solution is beneficial for TFETs to keep its advantages for ultra-low power applications such as implantable medical devices and Internet of Things.
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关键词
leakage current,isolation,static power,N- WELL-PWELL
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