Issues and Key Technologies for Next Generation 3D NAND
2021 International Conference on Electronics, Information, and Communication (ICEIC)(2021)
摘要
In this paper, design challenges and key technologies to overcome the hurdles for the future 3D NAND are introduced. More specifically, state-of-the-art solutions for higher density, lower cost and higher bandwidth NAND is covered in detail.
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关键词
3D VNAND,WL Stacks,Cell to Cell Interference,TLC,QLC,Toggle 4.0/5.0,Frequency Boosting Interface (F-chip)
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