Issues and Key Technologies for Next Generation 3D NAND

2021 International Conference on Electronics, Information, and Communication (ICEIC)(2021)

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摘要
In this paper, design challenges and key technologies to overcome the hurdles for the future 3D NAND are introduced. More specifically, state-of-the-art solutions for higher density, lower cost and higher bandwidth NAND is covered in detail.
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关键词
3D VNAND,WL Stacks,Cell to Cell Interference,TLC,QLC,Toggle 4.0/5.0,Frequency Boosting Interface (F-chip)
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