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个人简介
Jai-Hyuk Song received the B.S. degree in electronic engineering from the Korea Advanced Institute of Science and Technology, Daejeon, South Korea, in 1990 and M.S. and Ph.D. degrees in electronic engineering from Seoul National University, Seoul, South Korea, in 1992 and 1996, respectively.
He joined Samsung Electronics Corporation, Hwaseong, South Korea, as a DRAM Process Technology Development Engineer. In 2004, he started his new career as a NAND Flash Process and Device Engineer and developed V-NAND Architecture. He is currently an Executive Vice-President of the Flash Memory Division, Samsung Electronics. His current research interests include over 200 stages of high-performance and low-cost V-NAND Development.
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