Ultra-Low Threshold and Temperature-Stable InGaN Blue and Green Laser Diodes

IEEE Photonics Technology Letters(2021)

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摘要
We report on AlInGaN-based blue and green edge-emitting lasers designed for low-current operation and low power consumption. By properly optimizing cavity length and mirror coatings, threshold currents below 5 mA are achieved on single-mode blue laser diodes (LDs) emitting at 460 nm. For output power levels below 10 mW, the LDs with an optimized chip design exhibit a decreased power consumption and an increased power stability against temperature variations compared to LDs with a standard chip design. Extended to green emitters, the new design results in single-mode LDs emitting at 515 nm with threshold currents close to 15 mA.
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关键词
Blue lasers,green lasers,(In, Al)GaN,laser diode (LD),low threshold,low power consumption,augmented reality
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