Photo-Induced Conductivity Transient In N-Type Beta-(Al0.16ga0.84)(2)O-3 And Beta-Ga2o3

Photo-induced conductivity transients are reported for unintentionally doped (UID) beta-Ga2O3 and n-type beta-(Al0.16Ga0.84)(2)O-3. The illumination of (UID) beta-Ga2O3 and beta-(Al0.16Ga0.84)(2)O-3/Ga2O3 heterojunction with a sub-bandgap light ranging from 400 to 1000 nm (1.2-3.1 eV) increases their conductivity. The increase in the conductivity still remains after the light is turned off, and then slowly exhausts. From the transient photoconductivity, the optical cross-sections of the photo-ionized defects have been measured as a function of the photon energy, and the optical absorption peaks of the ionized defects have been calculated. Thus, the measured photoconductivity in both beta-Ga2O3 and (Al0.16Ga0.84)(2)O-3 are induced by broad optical absorption peaks that have been estimated to be 2.52-2.88 eV and 2.61-3.11 eV.