Voltage polarity effects in Ge2Sb2Te5-based phase change memory devicesAlvaro Padilla,Geoffrey W. Burr,Charles T. Rettner,Teya Topuria, Philip M. Rice,Bryan Jackson,Kumar Virwani,Andrew J. Kellock,Diego Dupouy,Anthony Debunne,Robert M. Shelby,Kailash Gopalakrishnan,Rohit S. Shenoy,Bülent N. KurdiJournal of Applied Physics(2011)引用 47|浏览0暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要