BEOL-Compatible, ALD-grown In 2 O 3 Top-Gate FETs with Maximum Drain Current of 3 A/mm through Thermal Engineering and Pulse Measurement

Pai-Ying Liao,Mengwei Si,Zhuocheng Zhang,Zehao Lin,Peide. D. Ye

2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)（2022）

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摘要

This paper reports 1 A/mm drain current (ID) and 0.24 Ω•mm contact resistance (RC) at on-state with BEOL-compatible, top-gated, and ALD-grown 1.3-nm In2O3. Nonetheless, the devices suffer severely from self-heating effect (SHE) as larger bias is applied. Accordingly, beside quantitatively investigating the SHE in this system, thermal engineering is utili...

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关键词

Pulse measurements,Thermal resistance,Thermal engineering,Field effect transistors,Very large scale integration,Contact resistance,Silicon

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