Constrained Coding and Deep Learning Aided Threshold Detection for Resistive Memories

IEEE Communications Letters(2022)

引用 5|浏览24
暂无评分
摘要
Resistive random access memory (ReRAM) is a promising emerging non-volatile memory (NVM) technology that shows high potential for both data storage and computing. However, its crossbar array architecture leads to the sneak path (SP) problem, which may severely degrade the data storage reliability of ReRAM. Due to the complicated nature of the SP-induced interference (SPI) 更多
查看译文
关键词
Arrays,Detectors,Resistance,Channel models,Microprocessors,Encoding,Power demand
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要