High-density low-loss millimeter-wave package interconnects with the impact of dielectric-material surface roughness

Heterogeneous package integration and chiplet approaches are the key technology to enable next-generation high performance small form-factor packages for emerging applications. Millimeter-wave packaging for fifth-generation and upcoming sixth-generation platforms also need to meet the high-density low signal-loss interconnect specifications utilizing advanced conductor and dielectric materials. This article presents the comparison of the liquid-based photoimageable dielectric (PID) and dry-film dielectric materials in terms of interconnect path losses that are critical in mm-wave frequency bands. The conductor loss being more dominant in the frequency bands and in thinner dielectric structures, we assess daisy chains and microstrip lines on 15-mu m dielectric by measuring the S-parameters to quantify the impact of the surface roughness at around 28 GHz. Measured results from the daisy chain and microstrip line structures exhibit that the smooth surface of the liquid-based PID (3 nm) leads to 8%-32% lower signal loss in the dB scale than the 325-nm rough dry-film dielectric. The study provides comprehensive experimental results that the different material forms with various surface roughness largely impact the package-level interconnect loss.