5G mmWave Power Amplifier and Low-Noise Amplifier in 300mm GaN-on-Si Technology

This paper presents fully integrated power amplifier (PA) and low-noise amplifier (LNA) targeting 5G mmWave band n260 (37GHz-40GHz) in 300mm GaN-on-Si technology. At 39.5GHz, the PA achieves measured P sat , peak PAE, linear gain, and OP1dB of 25dBm, 38.8%, 24.8dB, and 19.8dBm, occupying only 0.079mm ² . The LNA achieves 24.6dB gain, 2.9dB noise figure, and -11.4dBm IIP3 at 38GHz. Both circuits are compact and viable candidates for phased arrays in mobile devices. This is industry’s first demonstration of mmWave circuits in 300mm GaN-on-Si technology.