3.3 kV/450 A Full-SiC nHPD2 (next High Power Density Dual) with Smooth Switching

We have developed a 3.3 kV/450 A Full-SiC nHPD(exp 2) (next High Power Density Dual) module. An extremely low internal package inductance can make the best use of Full-SiC. Demonstration of fast and smooth switching characteristics of the module culminate in a total switching loss one fourth of a direct Si-IGBT equivalent. Superior output characteristics of the Full-SiC module under traction inverter simulation are presented. For accurate calculation, features of reverse conduction characteristics of the Full-SiC nHPD(exp 2) are considered.