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Tunnel Field-Effect Transistor Triggered Silicon-Controlled Rectifier

IEEE TRANSACTIONS ON ELECTRON DEVICES(2023)

Xian Univ Technol | Xian Xiangteng Microelect Co Ltd | Xidian Univ

Cited 0|Views13
Abstract
In this article, a tunnel field-effect transistor (TFET) triggered silicon-controlled rectifier (SCR) device is proposed. A TFET is embedded into the SCR enabling an early carrier’s transportation through the n-well/p-well reverse-biased junction. This accelerates the junction breakdown and helps to establish the SCR’s positive feedback regeneration. The applications of the TFET-triggered SCR (TTSCR) in electrostatic discharge (ESD) protection are explored and the electrical characteristics are investigated. Moreover, the impact of the device structure on the device performance is discussed. The principle of the proposed device is verified using technology computer-aided design (TCAD) simulation. The simulation results show that compared to the prevalent diode-triggered SCR, the proposed device has a small layout area, a low leakage current, and a low overshoot voltage.
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Key words
TFETs,Junctions,Logic gates,Anodes,Integrated circuit modeling,Equivalent circuits,Rectifiers,Band-to-band tunneling (BTBT),electrostatic discharge (ESD),silicon-controlled rectifier (SCR),tunnel field-effect transistor (TFET)
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要点】:本文提出了一种隧道场效应晶体管(TFET)触发的硅控整流器(SCR)器件,该器件通过嵌入TFET,加速了SCR的载流子传输,改善了其电学特性,并适用于静电放电(ESD)保护。

方法】:研究采用TCAD模拟验证了TFET触发SCR器件的工作原理,并探讨了器件结构对性能的影响。

实验】:通过TCAD模拟,结果表明与传统的二极管触发SCR相比,所提出的TFET触发SCR具有更小的布局面积、更低的泄漏电流和更低的超调电压。