Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO2 Capacitors
IEEE Transactions on Electron Devices(2023)
摘要
In this article, the influence of interface roughness on the ferroelectric (FE) performance of Hf0.5Zr0.5O2 (HZO) films was experimentally investigated. The HZO capacitor with a rough interface structure shows a higher remnant polarization (P-r) than that with a flat interface structure. However, although the device with the rough interface can achieve an improved P-r value, it generates a higher electric field within the HZO film and causes more obvious charge injection at the TaON/HZO interface, leading to the increase of interface traps (D-it) and leakage current (J(leakage)) as well as the degradation of endurance. The study is helpful for understanding and optimizing the growth technics of HfO2-based FE memory for advanced node technology.
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关键词
Charge injection,endurance,ferroelectric (FE),Hf0.5Zr0.5O2 (HZO),interface-roughness
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