Ultrathin Atomic-Layer-Deposited In2O3 Radio-Frequency Transistors with Record High fT of 36 GHz and BEOL Compatibility.Dongqi Zheng,Adam Charnas,Jian-Yu Lin,Jackson Anderson,Dana Weinstein,Peide D. YeVLSI Technology and Circuits(2023)引用 0|浏览6暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要