Chrome Extension
WeChat Mini Program
Use on ChatGLM
VIPCreated with Sketch.

    • Negative Capacitance Gate Stack and Landau FET-based Voltage Amplifiers and Circuits: Impact of Ferroelectric Thickness and Domain Variations

    Khoirom Johnson Singh,Lomash Chandra Acharya,Anand Bulusu,Sudeb Dasgupta

    MICROELECTRONICS JOURNAL（2023）

    Indian Inst Technol Roorkee

    Cited 1|Views15
    Abstract
    This article analyzes the impact of ferroelectric hafnium zirconium oxide (HZO) thickness (tFE) and domain number (N) variations on the negative capacitance (NC) effect in metal/HZO/metal gate stack and its implications on Landau FET-based device-circuit co-design through simulations. As tFE decreases, the NC effect weakens, resulting in less S-shaped hysteresis loops for charge and polarization versus voltage characteristics. The study highlights the trade-off between energy dissipation and NC effect voltage window in ferroelectric devices and the importance of balancing both. We developed Landau FET-based voltage amplifiers (VA), including passive VA (PVA) and active VA (AVA), and compared to existing counterparts such as P(VDF-TrFE)-PVA and PZT-AVA, across low and high frequencies. The proposed PVA shows a 22.60% and 54.31% increase in amplification (ANC) at low and high frequencies, respectively, compared to P(VDF-TrFE)-PVA. The AVA exhibits a 17.86% increase in ANC at low frequencies compared to PZT-AVA but no ANC at higher frequencies due to symmetry-breaking. The Landau FET-based inverter shows a sharp state transition than the CMOS inverter, but this sharpness depends on tFE, N, and the degree of NC effect. The Landau FET-based fan-out-4 inverter with 7.7 nm tFE and N = 16 is 25.49% faster than the Si MOSFET inverter. Moreover, the impact of tFE and N on the performance of the proposed 5-stage ring oscillator (RO) is investigated concerning state-of-the-art CMOS RO counterparts. The 5-stage RO using Landau FET-based inverters showed (1.26–18.9) times higher oscillation frequency (fOSC) and (17.93–5.71) times reduced power dissipation compared to the existing CMOS ROs. Finally, we examined how process variations impact the fOSC in the proposed 5-stage Landau FET-based RO. The findings indicate a standard deviation of 0.39 GHz in the distribution of fOSC. These findings highlight the interplay between tFE scaling, N variations, and transient NC effect, advancing Landau FET-based devices for future NC electronics.
    More
    Translated text
    Key words
    Ferroelectric,Hysteresis,Inverter,Landau FET,Negative capacitance effect,Ring oscillator,Voltage amplifier
    求助PDF
    上传PDF
    View via Publisher
    Bibtex
    AI Read Science
    AI Summary
    AI Summary is the key point extracted automatically understanding the full text of the paper, including the background, methods, results, conclusions, icons and other key content, so that you can get the outline of the paper at a glance.
    Example
    Background
    Key content
    Introduction
    Methods
    Results
    Related work
    Fund
    Key content
    • Pretraining has recently greatly promoted the development of natural language processing (NLP)
    • We show that M6 outperforms the baselines in multimodal downstream tasks, and the large M6 with 10 parameters can reach a better performance
    • We propose a method called M6 that is able to process information of multiple modalities and perform both single-modal and cross-modal understanding and generation
    • The model is scaled to large model with 10 billion parameters with sophisticated deployment, and the 10 -parameter M6-large is the largest pretrained model in Chinese
    • Experimental results show that our proposed M6 outperforms the baseline in a number of downstream tasks concerning both single modality and multiple modalities We will continue the pretraining of extremely large models by increasing data to explore the limit of its performance
    Upload PDF to Generate Summary
    Must-Reading Tree
    Example
    Generate MRT to find the research sequence of this paper
    Data Disclaimer
    The page data are from open Internet sources, cooperative publishers and automatic analysis results through AI technology. We do not make any commitments and guarantees for the validity, accuracy, correctness, reliability, completeness and timeliness of the page data. If you have any questions, please contact us by email: report@aminer.cn
    Chat Paper
    【要点】：本文通过仿真分析了铁电材料厚度和畴数变化对金属/铁电材料/金属栅堆栈中负电容效应的影响，并探讨了其对Landau场效应晶体管（FET）基于的电压放大器和电路设计的意义。
    

    【方法】：作者采用仿真方法研究了铁电 hafnium zirconium oxide (HZO) 的厚度（tFE）和畴数（N）变化对金属/HZO/金属栅堆栈中负电容（NC）效应的影响。
    

    【实验】：实验中，作者开发了一种基于Landau FET的电压放大器，包括被动VA（PVA）和主动VA（AVA），并与现有的P(VDF-TrFE)-PVA和PZT-AVA在低频和高频下进行了比较。实验使用的数据集为仿真生成的参数，结果展示了在低频和高频下，提出的PVA和AVA相比现有技术有显著的放大效果提升。此外，基于Landau FET的逆变器在7.7 nm tFE和N=16的配置下比Si MOSFET逆变器速度快25.49%，而5-stage RO使用Landau FET-based inverters的振荡频率和功耗分别比现有CMOS ROs高出(1.26–18.9)倍和降低(17.93–5.71)倍。最后，研究了工艺变化对5-stage Landau FET-based RO振荡频率的影响，发现标准偏差为0.39 GHz。