Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In2 O3 FETs
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)（2022）
摘要
In this work, we investigate the thermal issues of top-gated (TG), ultrathin, atomic layer deposition (ALD) grown, back-end-of-line (BEOL) compatible indium oxide (In
2
O
3
) transistors by observation and visualization of the self-heating effect (SHE) using high-resolution thermo-reflectance (TR) measurement. SHE is alleviated by highly resistive silicon (HR Si) substrate with high thermal conductivity (κ
Si
). The increased temperature (ΔT) of the devices on HR Si substrate is roughly 6 times lower than that with SiO
2
/Si substrate. Furthermore, thermal simulation with a finite-element method exhibits exceptional agreement to ΔT distribution with experimental results. By thermal engineering, TG In
2
O
3
transistors with channel thickness (T
ch
) of 1.8 nm and high drain current (I
D
) up to 2.65 mA/µm are achieved.
更多查看译文
关键词
back-end-of-line compatible indium oxide transistors,BEOL-compatible top-gated atomically thin ALD,finite-element method,high-resolution thermoreflectance measurement,thermal studies,high thermal conductivity,highly resistive silicon substrate,self-heating effect,visualization,atomic layer deposition,ultrathin layer deposition,thermal issues,ALD,TG,thermal engineering,ΔT distribution,thermal simulation,HR silicon substrate,size 1.8 nm,Si,In2O3,SiO2-Si
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要