Vertical Ga2 O3 Schottky Barrier Diodes with Guard Ring Formed by Nitrogen-Ion Implantation
2019 Compound Semiconductor Week (CSW)(2019)
摘要
A guard ring (GR) formed by nitrogen-ion implantation doping was employed to improve the breakdown voltage
$(V_{\mathrm{br}})$
of vertical Ga
2
O
3
Schottky barrier diodes (SBDs) by eliminating electric field concentration at the edges of anode and field-plate (FP) electrodes. Four types of vertical SBD structures with (a) neither a GR nor a FP, (b) a GR, (c) a FP, and (d) both a GR and a FP were fabricated on the same substrate. The SBDs with a GR [structures (b) and (d)] showed larger
$V_{\mathrm{br}}$
values than their GR-free counterparts [structures (a) and (c)], implying that the GR successfully redistributed the peak electric field at the anode and/or FP edges. Considering the trade-off relationship between
$V_{\mathrm{br}}$
and specific on-resistance
$(R_{\mathrm{on}})$
, a
$V_{\mathrm{br}}/R_{\mathrm{on}}$
combination of
$1.43\ \mathrm{kV}/4.7\ \mathrm{m}\Omega \mathrm{cm}^{2}$
for the GR/FP-SBD corresponds to one of the best balanced data for Ga
2
O
3
SBDs.
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关键词
GR-FP-SBD,guard ring,Schottky barrier diodes,field-plate electrodes,electric field concentration,breakdown voltage,nitrogen-ion implantation doping,peak electric field,vertical SBD structures,Ga2O3
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