Integration of (Poly-Si/Air)ⁿ Distributed Bragg Reflectors in a 150 mm Bulk Micromachined Wafer-Level MOEMS Fabrication Process

This paper reports the development and integration of (Poly-Si/Air)n Distributed BRAGG Reflectors (DBR) in a MOEMS Fabry-Perot-Interferometer (FPI) concept. The realized reflectors constitute a promising and resource-efficient alternative to complex Ion-Assisted Deposition based DBRs while maintaining their advantages. Compared to state of the art MOEMS FPIs the (Poly-Si/Air)n DBRs can be integrated into two moveable reflector carriers based on two individually fabricated wafers which are bonded. The (Poly-Si/Air)(n) DBRs are investigated as (HL) and (HL)(2) reflector stacks showing a reflectance above 91% within the wavelength range of 2.8-5.7 mu m. (c) 2023 The Authors. IEEJ Transactions on Electrical and Electronic Engineering published by Institute of Electrical Engineer of Japan and Wiley Periodicals LLC.