Effective passivation of p- and n-type In_0.53Ga_0.47As in achieving low leakage current, low interfacial traps, and low border traps

We have attained low leakage current, low interfacial traps, and low border traps by effectively passivating both p- and n-In0.53Ga0.47As (InGaAs) surfaces using the same gate dielectrics of ultra-high-vacuum deposited Al2O3/Y2O3. Gate leakage currents below 2 x 10(-7 )A/cm(2) at gate fields of +/- 4 MV/cm were obtained after 800 degrees C rapid thermal annealing, demonstrating the intactness of the interface and heterostructure. Negligibly small frequency dispersions in the capacitance-voltage (C-V) characteristics of p- and n-type metal-oxide-semiconductor capacitors (MOSCAPs) were obtained from accumulation, flatband, to depletion as measured from 300 K to 77 K, indicative of low border and interfacial trap density; the C-V frequency dispersions in the accumulation region are 1.5%/dec (300 K) and 0.19%/dec (77 K) for p-InGaAs, and 2.2%/dec (300 K) and 0.97%/dec (77 K) for n-InGaAs. Very low interfacial trap densities (D-it's) of (1.7-3.2) x 10(11) eV(-1)cm(-2) and (6.7-8.5) x 10(10) eV(-1)cm(-2), as extracted from the conductance method, were achieved on p- and n-InGaAs MOSCAPs, respectively.