Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance

Prakash Pandey,Tolen M. Nelson,Michael R. Hontz,Daniel G. Georgiev,Raghav Khanna,Alan G. Jacobs, James S. Lundh,James C. Gallagher,Andrew D. Koehler,Karl D. Hobart,Travis J. Anderson

IEEE Transactions on Electron Devices（2024）

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关键词

Implants,Gallium nitride,Fabrication,Junctions,Electric breakdown,Optimization,Lithography,Breakdown,edge termination,gallium nitride (GaN),technology computer-aided design (TCAD),vertical diodes

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